A cryogenic GaAs PHEMT/ferroelectric Ku-band tunable oscillatorROMANOFSKY, R. R; VAN KEULS, F. W; MIRANDA, F. A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.171-Pr3.174, issn 1155-4339Conference Paper

A new method to extract the effective trap density at the buried oxide/underlying substrate interface in enhancement-mode SOI MOSFETs at low temperaturesPAVANELLO, M. A; MARTINO, J. A..Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.45-Pr3.48, issn 1155-4339Conference Paper

Capabilities of antenna-coupled superconducting microbolometersLEONOV, V. N.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.267-Pr3.270, issn 1155-4339Conference Paper

Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2-300 KALAWNEH, I; SIMOEN, E; BIESEMANS, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.3-Pr3.8, issn 1155-4339Conference Paper

Express-control system of superconducting microcircuits fabrication technology by anodization spectroscopy methodVOJTOVICH, I; NAVALA, S; SHPILEVOY, P et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.309-Pr3.312, issn 1155-4339Conference Paper

Miniature temperature sensors based on Ge filmsMITIN, V. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.193-Pr3.195, issn 1155-4339Conference Paper

Modeling of the low temperature electron distribution function in ultra-fast transient situations for semiconductor devicesCHENG, M.-C.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.67-Pr3.70, issn 1155-4339Conference Paper

Non-equilibrium properties of Josephson critical current in Nb-based three terminal superconducting tunnel devicesAMMENDOLA, G; PARLATO, L; PELUSO, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.255-Pr3.258, issn 1155-4339Conference Paper

Some peculiarities of low temperature conductivity of silicon diodesSHWARTS, Y. M; SMERTENKO, P. S; SOKOLOV, V. N et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.75-Pr3.78, issn 1155-4339Conference Paper

X-ray response of Nb-based superconducting tunnel junctionCRISTIANO, R; ESPOSITO, E; AKOH, H et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.275-Pr3.278, issn 1155-4339Conference Paper

Advances in discrete GaAs JFETs and simple amplifiers for deep cryogenic readoutsCUNNINGHAM, T. J; FITZSIMMONS, M.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.127-Pr3.130, issn 1155-4339Conference Paper

Application of silicon substrates for high-T_c Josephson junctions and SQUIDsLINZEN, S; TIAN, Y. J; HÜBNER, U et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.297-Pr3.300, issn 1155-4339Conference Paper

Electric field effects at the surface of high-temperature superconductorsLYSENKO, V. S; TYAGULSKI, I. P; LOZOVSKI, V. Z et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.305-Pr3.308, issn 1155-4339Conference Paper

Gamma radiation tolerance of UHV/CVD SiGe BiCMOS technology operated at cryogenic temperaturesROLDAN, J. M; CRESSLER, J. D; NIU, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.99-Pr3.102, issn 1155-4339Conference Paper

High-temperature superconducting receiver coil for NMR skin imagingGINEFRI, J.-C; DARRASSE, L; CROZAT, P et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.245-Pr3.248, issn 1155-4339Conference Paper

I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperatureROLDAN, J. B; GAMIZ, F; LOPEZ-VILLANUEVA, J. A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.21-Pr3.24, issn 1155-4339Conference Paper

Implications of dopant-dependent low-field mobility and band gap narrowing on the bipolar device performancePALANKOVSKI, V; KAIBLINGER-GRUJIN, G; SELBERHERR, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.91-Pr3.94, issn 1155-4339Conference Paper

Low temperature mobility improvement in high-mobility strained-Si/Si_1-xGe_x multilayer MOSFETsROLDAN, J. B; GAMIZ, F; LOPEZ-VILLANUEVA, J. A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.57-Pr3.60, issn 1155-4339Conference Paper

The drain-bias-variable characteristics of exponent γ on 1/f^γ noise in DDD n-MOSFETs at 77 K and 300 KCHEN, S.-L; CHEN, S.-H.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.33-Pr3.35, issn 1155-4339Conference Paper

Towards practical quantum-limited SQUIDs for a gravitational wave antennaFLOKSTRA, J; BARTOLOME, E; VAN DUUREN, M. J et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.229-Pr3.232, issn 1155-4339Conference Paper

Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end elementCITTERIO, M; MANFREDI, P. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.155-Pr3.159, issn 1155-4339Conference Paper

Development of cryogenic Ge JFETsWARD, R. R; KIRSCHMAN, R. K; JHABVALA et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.123-Pr3.126, issn 1155-4339Conference Paper

Effects induced by electron beam irradiation on the properties of Y₁Ba₂Cu₃O_7-x biepitaxial Josephson junctionsTAFURI, F; NADGORNY, B; SHOKHOR, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.289-Pr3.292, issn 1155-4339Conference Paper

Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 KNIU, G; GOGINENI, U; CRESSLER, J. D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.103-Pr3.107, issn 1155-4339Conference Paper

Noise of high-Tc superconducting films and bolometersKHREBTOV, I. A; LEONOV, V. N; LAUKEMPER, J. K et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.293-Pr3.296, issn 1155-4339Conference Paper